?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA20N120FTD rev. c0 FGA20N120FTD 1200 v, 20 a field stop trench igbt april 2013 absolute maximum ratings notes: 1: repetitive rating, pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage ? 25 v i c continuous collector current @ t c = 25 o c 40 a continuous collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 25 o c 20 a p d maximum power dissipation @ t c = 25 o c 2 98 w maximum power dissipation @ t c = 100 o c 119 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0. 42 o c / w r ? jc (diode) thermal resistance, junction to case - 2.0 o c / w r ? ja thermal resistance, junction to ambient - 40 o c / w g e c g e c to-3pn FGA20N120FTD 1200 v, 20 a field stop trench igbt features ? field stop trench technology ? high speed switching ? low saturation voltage: v ce(sat) = 1. 6 v @ i c = 20 a ? high input impedance ?rohs compliant applications ? induction heating, microvewave oven general description using advanced field stop trench technology, fairchild ? ?s 1200v trench igbts offer superior conduction and switching performances for soft switching applications. the device can operate in parallel configuration with exceptional avalanche rug - gedness. this device is desi gned for induction heating and microwave oven.
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA20N120FTD rev. c0 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGA20N120FTD FGA20N120FTDtu to-3pn - - 30 symbol parameter test conditions min. typ. max. unit ? off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na ? on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 3.5 5.9 7.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v t c = 25 o c - 1.59 2 v i c = 20a , v ge = 15v, t c = 1 25 o c - 1.85 - v ? dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 3080 - pf c oes output capacitance - 95 - pf c res reverse transfer capacitance - 60 - pf ? switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 ? , v ge = 15v, resistive load, t c = 25 o c - 30 - ns t r rise time - 79 - ns t d(off) turn-off delay time - 143 - ns t f fall time - 217 320 ns e on turn-on switching loss - 0.42 - mj e off turn-off switching loss - 0.71 1.05 mj e ts total switching loss - 1. 13 - mj t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 ? , v ge = 15v, resistive load, t c = 125 o c - 29 - ns t r rise time - 93 - ns t d(off) turn-off delay time - 147 - ns t f fall time - 259 - ns e on turn-on switching loss - 0.47 - mj e off turn-off switching loss - 0.86 - mj e ts total switching loss - 1.33 - mj q g total gate charge v ce = 600v, i c = 20a, v ge = 15v - 137 - nc q ge gate to emitter charge - 23 - nc q gc gate to collector charge - 65 - nc
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA20N120FTD rev. c0 electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c - 1.3 1.7 v t c = 125 o c - 1.3 - t rr diode reverse recovery time i es =20a, di/dt = 200a/ ? s t c = 25 o c - 447 - ns t c = 125 o c - 485 - i rr diode peak reverse recovery current t c = 25 o c - 48 - a t c = 125 o c - 50 - q rr diode reverse recovery charge t c = 25 o c - 10.8 - ? c t c = 125 o c - 12 -
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA20N120FTD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge te mperature at variant current level 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 30 60 90 120 150 180 8v 7v 9v 17v 20v t c = 25 o c 15v 12v 10v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 7.5 9.0 0 30 60 90 120 150 180 17v 7v 10v 9v 8v 20v t c = 125 o c 15v 12v v ge = 6v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 3691215 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.2 1.6 2.0 2.4 2.8 4 0a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA20N120FTD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 110 0 1000 2000 3000 4000 5000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 306090120150 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 2000 0 20406080100 10 100 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 300 0 20406080100 100 1000 2000 70 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] gate resistance gate resistance
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA20N120FTD rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics figure 18. forward characteristics 10 20 30 40 50 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 500 10 20 30 40 50 10 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 100 0 20406080100 1 0.3 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 4 10 20 30 40 50 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 0.0 0.5 1.0 1.5 2.0 0.1 1 10 t j = 25 o c 30 t c = 125 o c t c = 25 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 2000 80
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA20N120FTD rev. c0 typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21.reverse recovery time figure 22 .transient thermal impedance of igbt 510152025 0 10 20 30 40 50 60 200a/ ? s di/dt = 100a/ ? s reverse recovery currnet, i rr [a] forward current, i f [a] 5 10152025 0 3000 6000 9000 12000 15000 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 510152025 0 200 400 600 800 1000 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGA20N120FTD 1200 v, 20 a field stop trench igbt ?2008 fairchild semiconductor corporation 8 www.fairchildsemi.com FGA20N120FTD rev. c0 mechanical dimensions to-3pn dimensions in millimeters
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